Electronics Condition Monitoring Lab

image - Electronics Condition Monitoring
© Fraunhofer IZM

Vibration measurement and test with electronic components, if required in combination with humidity and temperature stressing, contactless vibration measurements with laser vibrometer, and in-situ monitoring of the failure of electronic components.

Vibration tests

  • Excitation of electronic components with sinusoidal waves, noise, and shocks
  • Shaker LDS V455: force 500N, frequency range  20 - 7500Hz, with clamping cube 20 - 5000Hz, sample size max. 50 x 50 mm², Testing at room temperature
  • Shaker V830-335 : force10kN, frequency range 20 – 3000Hz, with clamping cube 20 – 2500 Hz, can be combined with climate chamber for humidity and temperature testing

Vibration measurements

  • Contactless measurements of velocity at individual points and on the surfaces with scanning laser vibrometer PSV 400
  • Visualisation of vibration data for design optimisation, weak-point analysis and trouble-shooting
  • Direct displacement measurement with displacement decoder or automatic calculation of acceleration and displacement from the velocity data
  • Determining Eigen-frequencies, natural modes, damping and displacement, to support FEM simulations

Vibration tests in combination with humidity and temperature variation

  • Carrying out vibration tests and measurements in combination with humidity and temperature variation
  • Temperature range without shaker -70°C to +180°C and max. 25°C/min rate of change
  • Temperature range with shaker approx. -40°C to+150°C and max. 15°C/min rate of change

Shock testing with Level Drop Tester

  • Shock testing electronic components for mobile equipment in accordance with JEDEC requirements (e.g. 2900 g / 0.3 ms)
  • Accelerations up to 5000g with a drop height of 1.6m
  • Continuous measurement of peak acceleration, impulse duration and impulse form

Power & Thermal Cycling

  • Active Power Cycling – accelerated lifecycling tests and lifetime modellation at a load change unit
  • also negative temperatures during cycling possible
  • MOSFETs, IGBTs und Diodes up to 600A

In-Situ monitoring of failures

  • Multi-channel online failure monitoring, terms of power outages or short circuits
  • Determination of the point of failure for reliability distributions, for verification of FEM simulations and as a basis for lifetime models