Low-Inductance Packages for Fast-Switching Semiconductors
The basis for Miniature Converters with High Power Density
The evolution of very fast-switching semiconductors on silicon carbide (SiC) and gallium nitride (GaN) basis opens the gates for completely new standard power converters. The key is to not simply replace silicon semiconductors in a standard case – the minimal improvement in performance would be too dearly bought.
To use the full potential of fast-switching wide band gap semiconductors, packages are needed that combine low parasitic capacity with good thermal management. The semiconductors can then be run at fast switching frequencies and high currents, allowing an up to tenfold decrease in the size and weight of passive components like filter chokes.
Integrating power semiconductors into circuit boards can offer the designers the freedom they need to create packages with the desired traits. At the same time, it provides an opportunity to place components in the immediate vicinity of the semiconductors to establish a breaker cell as the new core of a miniaturized converter. The end result is a compact converter capable of handling extreme power densities.
Possible use cases include solar power converters, active filters, PFCs, or converters for electric vehicles or charging stations.