From January to March 2024, Fraunhofer IZM held expert sessions that focused on the potential of wide-bandgap (WBG) semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) for power electronics. These materials enable significant miniaturization and increased system efficiency through higher switching speeds, as well as higher voltage and temperature resistance. This is particularly important for applications in electromobility and renewable energies.

During the five online sessions, Fraunhofer IZM experts provided practical insights into current developments and challenges in power electronics. They also highlighted the latest approaches and technologies, and discussed application scenarios, as well as the opportunities and challenges in customizing power electronics modules.